丝印：GD3HF60HD；Package：DPAK；4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

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STMICROELECTRONICS

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丝印：GD3HF60HD；Package：DPAK；4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultrafast soft recovery antiparallel diode Applications Motor drive Description The STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) v

文件：925.43 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体