Ultra fast \W\ series

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. High current capability\nLow C\nRES/C\nIES ratio (no cross-conduction susceptibility\nHigh frequency operation\nVery soft ultra fast recovery antiparallel diode;

ST

意法半导体

N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT

文件：289.28 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Package：SOT-227-4，miniBLOC；包装：盒 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 600V 100A 260W ISOTOP

STMICROELECTRONICS

意法半导体

N-channel 600V - 55A - TO-247

文件：289.15 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Trench and Field Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.5V@IC=40A ·High Current Capability ·High Input Impedance ·Fast Swithching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·Hig

文件：412.08 Kbytes 页数：3 Pages

ISC

无锡固电

N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT

文件：134.48 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体