Trench and Field Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.5V@IC=40A ·High Current Capability ·High Input Impedance ·Fast Swithching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·Hig

文件：412.08 Kbytes 页数：3 Pages

ISC

无锡固电

N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT

文件：134.48 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

极快“W”系列

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. • Very high frequency operation \n• Very soft ultra fast recovery antiparallel diode \n• Low CRES/CIES ratio (no cross-conduction susceptibility);

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 110A 278W MAX247

STMICROELECTRONICS

意法半导体