Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos • Maximum junction temperature: TJ= 175 °C\n• Tail-less switching off\n• VCE(sat)= 1.85 V (typ.) @ IC= 30 A\n• Tight parameters distribution• Safe paralleling\n• Low thermal resistance\n• Very fast soft recovery antiparallel diode;

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意法半导体

Low thermal resistance

文件：1.91768 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 258W TO220AB

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.45343 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.91768 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

文件：1.47767 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体