STGW30V60F

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos; • Maximum junction temperature: TJ= 175 °C\n• Tail-less switching off\n• VCE(sat)= 1.85 V (typ.) @ IC= 30 A• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance;

STGW30V60F

丝印：GW30V60F；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

STGW30V60F

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 260W TO247

STGWT30V60DF

Lowthermalresistance

STGWT30V60F

Trenchgatefield-stopIGBT,Vseries600V,30Averyhighspeed