19 A - 600 V - very fast IGBTE[

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意法半导体

19 A - 600 V - very fast IGBT

文件：724.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 9A - TO-220FP Very fast PowerMESH TM IGBT

文件：276.6 Kbytes 页数：14 Pages

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意法半导体

19 A - 600 V - very fast IGBT

文件：511.88 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

19 A, 600 V, very fast IGBT with Ultrafast diode

These devices are ultrafast IGBT. They utilize theadvanced Power MESH™ process resulting in anexcellent trade-off between switchingperformance and low on-state behavior.\n • Low on-voltage drop (VCE(sat))• Very soft Ultrafast recovery anti-parallel diode;

ST

意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 16A 32W TO220FP

STMICROELECTRONICS

意法半导体