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STGF10NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件:379.54 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STGF10NC60KD

丝印:GF10NC60KD;Package:TO-220FP;10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件:1.6576 Mbytes 页数:30 Pages

STMICROELECTRONICS

意法半导体

STGF10NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件:526.13 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STGF10NC60KD

10 A, 600 V short-circuit rugged IGBT

文件:613.22 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STGF10NC60KD_V01

10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件:1.6576 Mbytes 页数:30 Pages

STMICROELECTRONICS

意法半导体

STGF10NC60KD_07

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件:526.13 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STGF10NC60KD

6 A、600 V短路保护IGBT,TO-220FP封装

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. • Lower on voltage drop (VCE(sat)) \n• Very soft ultra fast recovery antiparallel diode \n• Lower CRES / CIES ratio (no cross-conduction susceptibility) \n• Short-circuit withstand time 10μs;

ST

意法半导体

STGF10NC60KD

Package:TO-220-3 整包;包装:管件 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 9A 25W TO220FP

STMICROELECTRONICS

意法半导体

产品属性

  • 产品编号:

    STGF10NC60KD

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 系列:

    PowerMESH™

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.5V @ 15V,5A

  • 开关能量:

    55µJ(开),85µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    17ns/72ns

  • 测试条件:

    390V,5A,10欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商器件封装:

    TO-220FP

  • 描述:

    IGBT 600V 9A 25W TO220FP

供应商型号品牌批号封装库存备注价格
ST(意法半导体)
24+
TO-220F
942
原厂订货渠道,支持BOM配单一站式服务
询价
ST/意法半导体
22+
TO-220-3 FP
6002
原装正品现货 可开增值税发票
询价
ST
11+
TO220
4200
原装现货价格有优势量多可发货
询价
ST
24+
TO-220-3
188
询价
ST
24+
TO-220F
2500
原装现货热卖
询价
ST
16+
TO-263
10000
全新原装现货
询价
ST
25+
TO-220F
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
STMicroelectronics
24+
NA
3425
进口原装正品优势供应
询价
ST
23+
TO-220F
8650
受权代理!全新原装现货特价热卖!
询价
23+
NA
3000
专做原装正品,假一罚百!
询价
更多STGF10NC60KD供应商 更新时间2026-2-3 22:59:00