Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：689.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in I2PAKFP package

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Industry’s lowest R\nDS(on) x area\nIndustry’s best FoM (figure of merit)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

ST

意法半导体

Ultra low gate charge

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：956.08 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

文件：1.00919 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

文件：1.00919 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体