N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

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STMICROELECTRONICS

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N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in I2PAKFP package

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Industry’s lowest R\nDS(on)x area\nIndustry’s best figure of merit (FoM)\nUltra low gate charge\n100% avalanche tested\nZener-protected;

ST

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N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT

文件：1.40505 Mbytes 页数：17 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 950mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.78 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages

文件：1.19102 Mbytes 页数：16 Pages

STMICROELECTRONICS

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