STGB10H60DF规格书应用电路供应价格-114ic电子网

首页 >STGB10H60DF>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
STGB10H60DF	文件：1.73583 Mbytes Page：24 Pages	丝印：GB10H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 10 A high speed Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s 文件：1.73583 Mbytes 页数：24 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGB10H60DF	文件：300 bytes Page：1 Pages	600 V、10 A高速沟槽栅场截止H系列IGBT These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Further • High speed switching \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;	ST 意法半导体	ST
STGF10H60DF	文件：1.73583 Mbytes Page：24 Pages	Trench gate field-stop IGBT, H series 600 V, 10 A high speed Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s 文件：1.73583 Mbytes 页数：24 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGP10H60DF	文件：1.73583 Mbytes Page：24 Pages	Trench gate field-stop IGBT, H series 600 V, 10 A high speed Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s 文件：1.73583 Mbytes 页数：24 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STPS10H60SF	文件：326.72 Kbytes Page：10 Pages	60 V power Schottky rectifier Features • Low profile design – package typical height of 1.1 mm typ. • Wettable flanks for automatic visual inspection • High junction temperature capability • Low Leakage current • Avalanche capability • ECOPACK®2 compliant Applications • Set-top box • Battery charger • DC / DC conve 文件：326.72 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Package：
D2PAK
Grade：
Industrial
VCES_max(V)：
600
PTOT_max(W)：
115
Freewheeling diode：
true
IC_max(@ Tc=100°C)(A)：
10
IC_max(@ Tc=25°C)(A)：
20
IF_max(@ Tc=100°C)(A)：
10
IF_max(@ Tc=25°C)(A)：
20
VCE(sat)_typ(V)：
1.5
VF_typ(V)：
1.7
Qg_typ(nC)：
57
Eon_typ(mJ)：
0.08
Eoff_typ(mJ)：
0.14

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳和润天下电子科技有限公司	STGB10H60DF	ST/意法半导体	22+	D2PAK	6006	原装正品现货可开增值税发票	询价
柒号芯城电子商务(深圳)有限公司	STGB10H60DF	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市高捷芯城科技有限公司	STGB10H60DF	STMICRO	25+	N/A	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市达恩科技有限公司	STGB10H60DF	STMicroelectronics	24+	NA	3391	进口原装正品优势供应	询价
艾睿（深圳）半导体有限公司	STGB10H60DF	ST	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	STGB10H60DF	STM	25+	TO-263	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市正纳电子有限公司	STGB10H60DF	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市易讯博科技有限公司	STGB10H60DF		22+	NA	3000	加我QQ或微信咨询更多详细信息,	询价
深圳市安富世纪电子有限公司	STGB10H60DF	ST	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳市斌能达电子科技有限公司	STGB10H60DF	ST/意法半导体	24+	D2PAK	6000	全新原装深圳仓库现货有单必成	询价

更多STGB10H60DF供应商更新时间2026-1-29 8:31:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号