isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 30A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 95mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

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N沟道650 V、0.073 Ohm典型值、30 A MDmesh M5功率MOSFET，TO-3PF封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

Low input capacitance and gate charge

文件：1.10742 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

文件：1.58846 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.01 Kbytes 页数：2 Pages

ISC

无锡固电