沟槽栅场截止IGBT，M系列，650 V、30 A，低损耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n• Tight parameters distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

ST

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Low thermal resistance

文件：881.96 Kbytes 页数：18 Pages

STMICROELECTRONICS

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Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

文件：731.88 Kbytes 页数：16 Pages

STMICROELECTRONICS

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Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Features • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Exc

文件：1.08111 Mbytes 页数：16 Pages

STMICROELECTRONICS

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Low thermal resistance

文件：695.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体