600 V、40 A超高速沟槽栅场截止V系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• Tail-less switching off \n• VCE(sat) = 1.8 V (typ.) @ IC = 40 A \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance;

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意法半导体

丝印：GB40V60F；Package：D2PAK；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.89413 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.83352 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.89413 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.89413 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体