isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 950mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.78 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：8N80K5；Package：TO-220；N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages

文件：1.19102 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages

文件：1.19102 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体