STGB15H60DF规格书供应价格意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STGB15H60DF	文件：1.86596 Mbytes Page：23 Pages	丝印：GB15H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 15 A high speed Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s 文件：1.86596 Mbytes 页数：23 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGB15H60DF	文件：300 bytes Page：1 Pages	600 V、15 A高速沟槽栅场截止H系列IGBT These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Further • High speed switching \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;	ST 意法半导体	ST
STGF15H60DF	文件：1.86596 Mbytes Page：23 Pages	Trench gate field-stop IGBT, H series 600 V, 15 A high speed Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s 文件：1.86596 Mbytes 页数：23 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGP15H60DF	文件：1.86596 Mbytes Page：23 Pages	Trench gate field-stop IGBT, H series 600 V, 15 A high speed Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s 文件：1.86596 Mbytes 页数：23 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGWT15H60F	文件：845.29 Kbytes Page：15 Pages	Trench gate field-stop IGBT, H series 600 V, 15 A high speed Features  High speed switching  Tight parameter distribution  Safe paralleling  Low thermal resistance  Short-circuit rated Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. Th 文件：845.29 Kbytes 页数：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Package：
D2PAK
Grade：
Industrial
VCES_max(V)：
600
PTOT_max(W)：
115
Freewheeling diode：
true
IC_max(@ Tc=100°C)(A)：
15
IC_max(@ Tc=25°C)(A)：
30
IF_max(@ Tc=100°C)(A)：
15
IF_max(@ Tc=25°C)(A)：
30
VCE(sat)_typ(V)：
1.6
VF_typ(V)：
1.8
Qg_typ(nC)：
81
Eon_typ(mJ)：
0.14
Eoff_typ(mJ)：
0.21

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	STGB15H60DF	ST(意法半导体)	24+	TO-263-3	1612	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市勤思达科技有限公司	STGB15H60DF	ST	21+	TO-263	10000	勤思达只做原装现货库存支持支持实单	询价
柒号芯城电子商务(深圳)有限公司	STGB15H60DF	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市富达微科技有限公司	STGB15H60DF	ST/意法半导体	24+	原厂封装	5000	原厂原装,价格优势,欢迎洽谈!	询价
深圳市达恩科技有限公司	STGB15H60DF	STMicroelectronics	24+	NA	3639	进口原装正品优势供应	询价
深圳市科雨电子有限公司	STGB15H60DF	STM	25+	TO-263	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	STGB15H60DF		22+	NA	3000	加我QQ或微信咨询更多详细信息,	询价
深圳市安富世纪电子有限公司	STGB15H60DF	ST	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳市富利微电子科技有限公司	STGB15H60DF	ST	25+	TO-263	30000	原装正品公司现货,假一赔十!	询价
深圳市斌能达电子科技有限公司	STGB15H60DF	ST	24+	TO-263	6000	全新原装深圳仓库现货有单必成	询价

更多STGB15H60DF供应商更新时间2026-2-1 8:11:00

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