Trench gate field-stop IGBT, H series 600 V, 15 A high speed

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is partof the H series of IGBTs, which represents an optimum compromise between conduction andswitching losses to maximize the efficiency of high switching frequency converters.Furthermore, a • High speed switching\n• Tight parameter distribution\n• Safe paralleling• Low thermal resistance\n• Short-circuit rated;

ST

意法半导体

丝印：G15H60F；Package：TO-3P；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Features  High speed switching  Tight parameter distribution  Safe paralleling  Low thermal resistance  Short-circuit rated Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. Th

文件：845.29 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT H SE

STMICROELECTRONICS

意法半导体

Fast Recovery Diode

文件：615.36 Kbytes 页数：5 Pages

KSS

京瓷

Control Integrated POwer System

文件：1.01641 Mbytes 页数：16 Pages

Infineon

英飞凌

Control Integrated POwer System

文件：953.44 Kbytes 页数：16 Pages

Infineon

英飞凌