丝印：GP15H60DF；Package：TO-220；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

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STMICROELECTRONICS

意法半导体

600 V、15 A高速沟槽栅场截止H系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Further • High speed switching \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 30A 115W TO220

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Features  High speed switching  Tight parameter distribution  Safe paralleling  Low thermal resistance  Short-circuit rated Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. Th

文件：845.29 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体