isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on)

文件：335.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

文件：459.62 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：4N150；Package：TO-3PF；N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：762.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道1500 V、5 Ohm、4 A PowerMESH(TM) 功率MOSFET，TO-3PF封装

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.\n\n The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) • 100% avalanche tested \n• High speed switching \n• Intrinsic capacitances and Qg minimized \n• Creepage distance path is 5.4 mm (typ.) for TO-3PF \n• Fully isolated TO-3PF plastic packages;

ST

意法半导体

N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：762.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体