isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 58A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

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ISC

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N-channel 650 V, 0.037 廓 typ., 58 A MDmesh??V Power MOSFET in TO-3PF and TO-247 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：672.41 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET，TO-3PF封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

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isc N-Channel Mosfet Transistor

文件：420.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.037 廓 typ., 58 A MDmesh??V Power MOSFET in TO-3PF and TO-247 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：672.41 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体