EAS 180 mJ - 400 V - internally clamped IGBT

Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot

文件：632.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：GB18N40LZ；Package：D2PAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.

文件：575.8 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 400 V - internally clamped IGBT

文件：636.58 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

EAS 180 mJ - 390 V - internally clamped IGBT

文件：896 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

汽车级390 V内部钳制IGBT ESCIS 180 mJ

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-pro • AEC-Q101 qualified \n• SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH \n• Parts are 100% tested in SCIS \n• ESD gate-emitter protection \n• Gate-collector high voltage clamping \n• Logic level gate drive \n• Very low saturation voltage \n• High pulsed current capability \n• Gate and gate-emitte;

ST

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 420V 30A 150W D2PAK

STMICROELECTRONICS

意法半导体