Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

Features

■ AEC Q101 compliant

■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

■ ESD gate-emitter protection

■ Gate-collector high voltage clamping

■ Logic level gate drive

■ Low saturation voltage

■ High pulsed current capability

■ Gate and gate-emitter resistor

Application

■ Pencil coil electronic ignition driver

STGD18N40LZT4属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGD18N40LZT4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。