N沟道600 V、7 A超快IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switchi • Low on voltage drop (Vcesat) \n• Low CRES / CIESratio (no cross-conduction susceptibility) \n• High frequency operation \n• High frequency inverters \n• SMPS and PFC in both hard switch and resonant topologies \n• Motor drivers;

ST

意法半导体

丝印：GD6NC60H；Package：IPAK；N-channel 600 V, 7 A - IPAK Very fast PowerMESH??IGBT

文件：376.04 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT N-CH 600V 7A IPAK

STMICROELECTRONICS

意法半导体

TO-263

st

上传：深圳市汇创佳电子科技有限公司

SOT227

ST

上传：深圳市东来宝电子科技有限公司