STGD6NC60H-1中文资料N沟道600 V、7 A超快IGBT数据手册ST规格书

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.

特性 Features

• Low on voltage drop (Vcesat)
• Low CRES / CIESratio (no cross-conduction susceptibility)
• High frequency operation
• High frequency inverters
• SMPS and PFC in both hard switch and resonant topologies
• Motor drivers

简介

STGD6NC60H-1属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD6NC60H-1晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。