N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in I2PAKFP package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most 100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\n;

ST

意法半导体

N-channel 600 V, 0.092, 31.5 A MDmesh II Power MOSFET in a PAKFP package

文件：851.89 Kbytes 页数：1 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.092 廓, 29 A MDmesh??II Power MOSFET TO-220, TO-247, TO-220FP

文件：941.09 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Low gate input resistance

文件：1.36887 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.03 Kbytes 页数：2 Pages

ISC

无锡固电