Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：831.19 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAKFP package

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi Industry’s lowest RDS(on)\nIndustry’s best figure of merit (FoM)\nUltra low gate charge\n100% avalanche tested\nZener-protected;

ST

意法半导体

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件：1.29122 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.6Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.81 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：339.4 Kbytes 页数：2 Pages

ISC

无锡固电