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STP6N80K5

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件:1.29122 Mbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

STP6N80K5

isc N-Channel MOSFET Transistor

文件:339.4 Kbytes 页数:2 Pages

ISC

无锡固电

STP6N80K5

N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET,TO-220封装

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

STB6N80K5

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件:1.29122 Mbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

STD6N80K5

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件:1.29122 Mbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

STF6N80K5

Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件:831.19 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    TO-220AB

  • Grade:

    Industrial

  • VDSS(V):

    800

  • RDS(on)_max(@ VGS=10V)(Ω):

    1.5

  • Drain Current (Dc)_max(A):

    4.5

  • PTOT_max(W):

    110

  • Qg_typ(nC):

    7.5

供应商型号品牌批号封装库存备注价格
ST/意法
25+
T0-220
32360
ST/意法全新特价STP6N80K5即刻询购立享优惠#长期有货
询价
STM
19+
18850
TO-220-3
询价
ST/意法半导体
22+
TO-220-3
6001
原装正品现货 可开增值税发票
询价
STM
23+
TO-220-3
17950
原装现货支持送检
询价
ST(意法半导体)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
ST
16+
TO-220-3
10000
原装正品
询价
ST
23+
TO-220
30000
代理全新原装现货,价格优势
询价
ST/意法
23+
NA
12730
原装正品代理渠道价格优势
询价
ST(意法半导体)
2447
TO-220-3
115000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
STM
25+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
更多STP6N80K5供应商 更新时间2025-10-4 14:14:00