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型号	下载订购	功能描述	制造商上传企业	LOGO
STB6N80K5	文件：1.29122 Mbytes Page：26 Pages	Zener-protected Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef 文件：1.29122 Mbytes 页数：26 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STB6N80K5	文件：300 bytes Page：1 Pages	N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET，D2PAK封装 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;	ST 意法半导体	ST
STD6N80K5	文件：1.29122 Mbytes Page：26 Pages	Zener-protected Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef 文件：1.29122 Mbytes 页数：26 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STF6N80K5	文件：831.19 Kbytes Page：15 Pages	Ultra low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi 文件：831.19 Kbytes 页数：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STFI6N80K5	文件：831.19 Kbytes Page：15 Pages	Ultra low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi 文件：831.19 Kbytes 页数：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Package：
D2PAK
Grade：
Industrial
VDSS(V)：
800
RDS(on)_max(@ VGS=10V)(Ω)：
1.5
Drain Current (Dc)_max(A)：
4.5
PTOT_max(W)：
110
Qg_typ(nC)：
7.5

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳和润天下电子科技有限公司	STB6N80K5	ST/意法半导体	22+	TO-263-3	6000	原装正品现货可开增值税发票	询价
柒号芯城电子商务(深圳)有限公司	STB6N80K5	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市科恒伟业电子有限公司	STB6N80K5	ST	23+	D2PAK	6850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市华来深电子有限公司	STB6N80K5	ST	23+	N/A	8650	受权代理!全新原装现货特价热卖!	询价
瑞航达科技(深圳)有限公司	STB6N80K5	ST	16+	TO-263-3	10000	原装正品	询价
深圳市斌腾达科技有限公司	STB6N80K5	STMicroelectronics	21+	D2PAK	1000	100%进口原装!长期供应!绝对优势价格(诚信经营)!	询价
深圳市科雨电子有限公司	STB6N80K5	STM	25+	TO-263	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	STB6N80K5	ST	21+	TO-263	1488	绝对有现货,不止网上数量!原装正品,假一赔十!	询价
深圳市正纳电子有限公司	STB6N80K5	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市星佑电子有限公司	STB6N80K5	ST/意法	21+	TO-263	10000	全新原装公司现货价格优	询价

更多STB6N80K5供应商更新时间2025-10-4 8:31:00

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