isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.6Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.81 Kbytes 页数：2 Pages

ISC

无锡固电

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件：1.29122 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAK package

这款超高压N-沟道功率MOSFETs 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。\n • 业界领先的低RDS（on）\n• 业界出色的品质因数（FoM）\n• 极低的栅极电荷• 经过100％雪崩测试\n• 稳压保护;

ST

意法半导体

isc N-Channel MOSFET Transistor

文件：339.4 Kbytes 页数：2 Pages

ISC

无锡固电

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件：1.29122 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体