丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=28A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 110mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

文件：358.66 Kbytes 页数：2 Pages

ISC

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丝印：34N65M5；Package：I2PAK；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

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Low gate input resistance

文件：1.10807 Mbytes 页数：15 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：320.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体