丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262( I2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 42A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 63mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

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STMICROELECTRONICS

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N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in I2PAK package

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on)*area amongst the silicon based devices\n• Higher VDSSrating, high dv/dt capability• Excellent switching performance\n• Easy to drive, 100% avalanche tested;

ST

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