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STI57N65M5

Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(I2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI57N65M5

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB57N65M5

N-channel650V,0.056typ.,42AMDmeshVPowerMOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB57N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF57N65M5

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchingappli

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF57N65M5

N-channel650V,0.056typ.,42AMDmeshVPowerMOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF57N65M5

N-channel650V,0.056廓typ.,42AMDmesh??VPowerMOSFETinI짼PAK,TO-220,TO-220FPandD짼PAKpackages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STL57N65M5

N-channel650V,0.061廓typ.,22.5AMDmesh??VPowerMOSFETinaPowerFLAT??8x8HVpackage

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP57N65M5

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP57N65M5

N-channel650V,0.056typ.,42AMDmeshVPowerMOSFET

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW57N65M5

N-channel650V,0.056廓typ.,42AMDmesh??VPowerMOSFETinI짼PAK,TO-220,TO-220FPandD짼PAKpackages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW57N65M5

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STWA57N65M5

N-channel650V,0.056Ωtyp.,42AMDmesh™VPowerMOSFETsinTO-247andTO-247longleadspackages

Features •WorldwidebestRDS(on)*areaamongstthe siliconbaseddevices •HigherVDSSrating,highdv/dtcapability •Excellentswitchingperformance •Easytodrive,100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerM

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STWA57N65M5

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STI57N65M5

  • 功能描述:

    MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST/意法半导体
22+
TO-262-3
6003
原装正品现货 可开增值税发票
询价
STMicroelectronics
18+
NA
3713
进口原装正品优势供应QQ3171516190
询价
ST
23+
TO-262
8650
受权代理!全新原装现货特价热卖!
询价
ST
18+
TO-262
85600
保证进口原装可开17%增值税发票
询价
ST
21+
35200
一级代理/放心采购
询价
ST
20+
TO-262
25000
全新原装现货,假一赔十
询价
ST
21+
TO-262
6048
原装现货假一赔十
询价
STM
1809+
TO-262
326
就找我吧!--邀您体验愉快问购元件!
询价
ST/意法
TO-262
265209
假一罚十,原包原标签,常备现货
询价
ST/意法半导体
21+
TO-262-3
8800
公司只做原装正品
询价
更多STI57N65M5供应商 更新时间2024-4-30 15:47:00