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STI57N65M5数据手册ST中文资料规格书
STI57N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on)*area amongst the silicon based devices
• Higher VDSSrating, high dv/dt capability
• Excellent switching performance
• Easy to drive, 100% avalanche tested
技术参数
- 制造商编号
：STI57N65M5
- 生产厂家
：ST
- Package
：I2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.063
- Drain Current (Dc)_max(A)
：42
- PTOT_max(W)
：250
- Qg_typ(nC)
：98
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
25+ |
TO-262 |
32360 |
ST/意法全新特价STI57N65M5即刻询购立享优惠#长期有货 |
询价 | ||
ST/意法半导体 |
2020+ |
TO-262-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | ||
ST/意法半导体 |
21+ |
TO-262-3 |
10000 |
原装公司现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-262-3 |
20000 |
原装进口正品 |
询价 | ||
ST/意法 |
24+ |
TO-262 |
60000 |
全新原装现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-262-3 |
20000 |
现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-262-3 |
16960 |
原装正品现货支持实单 |
询价 |
