丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=33A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 79mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

文件：357.93 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 33A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 79mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic

文件：1.10111 Mbytes 页数：18 Pages

STMICROELECTRONICS

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丝印：42N65M5；Package：I2PAK；N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic

文件：1.10123 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET

文件：1.10667 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in I2PAK package

• 100% avalanche tested\n• TO-220 worldwide best RDS(on)\n• High dv/dt capability• Higher VDSS rating\n• Easy to drive\n• Excellent switching performance;

ST

意法半导体