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STI4N62K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:282.15 Kbytes 页数:2 Pages

ISC

无锡固电

STI4N62K3

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件:1.06158 Mbytes 页数:19 Pages

STMICROELECTRONICS

意法半导体

STI4N62K3

N沟道620 V、1.7 Ohm典型值、3.8 A SuperMESH3(TM) 功率MOSFET,I2PAK封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

STP4N62K3

N-Channel 650 V (D-S) MOSFET

文件:1.09031 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

STP4N62K3

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件:1.06158 Mbytes 页数:19 Pages

STMICROELECTRONICS

意法半导体

STP4N62K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:373.04 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Package:

    I2PAK

  • Grade:

    Industrial

  • VDSS(V):

    620

  • RDS(on)_max(@ VGS=10V)(Ω):

    2

  • Drain Current (Dc)_max(A):

    3.8

  • PTOT_max(W):

    70

  • Qg_typ(nC):

    22

供应商型号品牌批号封装库存备注价格
ST/意法半导体
22+
TO-262-3
6004
原装正品现货 可开增值税发票
询价
ST
22+
30000
原装现货,可追溯原厂渠道
询价
STMicroelectronics
25+
N/A
11580
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
三年内
1983
只做原装正品
询价
STM
25+
TO-262
3675
就找我吧!--邀您体验愉快问购元件!
询价
ST
24+
原厂正品
9240
原装现货 假一赔百
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST/意法半导体
24+
TO-262-3
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
21+
TO-262-3
8860
只做原装,质量保证
询价
更多STI4N62K3供应商 更新时间2026-1-30 8:31:00