首页 >STFI4N62K3>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STFI4N62K3 | N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi 文件:1.06158 Mbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STFI4N62K3 | N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAKFP package These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab 100% avalanche tested\nExtremely high dv/dt capability\nGate charge minimized\nVery low intrinsic capacitance\nImproved diode reverse recovery characteristics\nZener-protected; | ST 意法半导体 | ST | |
N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi 文件:1.06158 Mbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:282.15 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi 文件:1.06158 Mbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
19+ |
10000 |
I2PAKFP (TO-281-3) |
询价 | |||
ST(意法半导体) |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST原装 |
25+23+ |
TO-262F |
23551 |
绝对原装正品全新进口深圳现货 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST原装 |
24+ |
TO-262F |
30980 |
原装现货/放心购买 |
询价 | ||
ST(意法半导体) |
2447 |
I2PAKFP |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
STM |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
22+ |
NA |
1414 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法 |
23+ |
TO-262F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 |
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