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STB34N65M5中文资料N沟道650 V、0.09 Ohm典型值、28 A MDmesh M5功率MOSFET，D2PAK封装数据手册ST规格书
STB34N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSSrating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STB34N65M5
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.11
- Drain Current (Dc)_max(A)
：29
- PTOT_max(W)
：190
- Qg_typ(nC)
：70
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
14+ |
TO-263 |
326 |
询价 | |||
ST/意法 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST |
25+23+ |
TO-263 |
27150 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
326 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST(意法半导体) |
24+ |
D2PAK |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
39197 |
郑重承诺只做原装进口现货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
询价 |
