首页>STB30N65M5>规格书详情
STB30N65M5中文资料N沟道650 V、0.125 Ohm典型值、22 A MDmesh M5功率MOSFET，D2PAK封装数据手册ST规格书
STB30N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on)*area
• Higher VDSSrating
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
• High dv/dt capability
技术参数
- 制造商编号
：STB30N65M5
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.139
- Drain Current (Dc)_max(A)
：22
- PTOT_max(W)
：140
- Qg_typ(nC)
：64
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
23+ |
TO-263-3 (D2PAK) |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
20+ |
D2PAK |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
24+ |
TO263 |
25836 |
新到现货，只做全新原装正品 |
询价 | ||
ST/ |
24+ |
TO263 |
5000 |
全新原装正品,现货销售 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
询价 |
