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STB28NM60ND中文资料N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package数据手册ST规格书
STB28NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
Intrinsic fast-recovery body diode
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STB28NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Tape and Reel
- 功能描述：
N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Cut TR(SOS)
- 功能描述：
MOSFET N-CH 600V 24A D2PAK
- 功能描述：
MOSFET N-CH 600V 23A D2PAK
- 功能描述：
600V, 0.120 OHM, 24A, POWERFET W/ FAST DIODE, N-CHANNEL, D2PAK
- 功能描述：
Single N-Channel 600 V 0.15 Ohm 190 W Surface Mount Power Mosfet - D2PAK-3
- 功能描述：
Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
24+ |
TO-263-3 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
2517+ |
TO263 |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
STM |
23+ |
D2PAK |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
2000 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST/意法 |
25+ |
TO263 |
32360 |
ST/意法全新特价STB28NM60ND即刻询购立享优惠#长期有货 |
询价 | ||
ST |
24+ |
TO-263 |
25836 |
新到现货，只做全新原装正品 |
询价 | ||
ST/ |
24+ |
TO-263 |
5000 |
全新原装正品,现货销售 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST/意法 |
22+ |
TO263 |
18000 |
原装正品 |
询价 |
