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STB33N60DM6数据手册ST中文资料规格书
STB33N60DM6规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STB33N60DM6
- 生产厂家
:ST
- Package
:D2PAK
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.128
- Drain Current (Dc)_max(A)
:25
- PTOT_max(W)
:190
- Qg_typ(nC)
:35
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:115
- Qrr_typ(nC)
:520
- Peak Reverse Current_nom(A)
:9
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
STM |
18+ |
TO263 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
6000 |
我们只做原装正品,支持检测。 |
询价 | ||
STMicroelectronics |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST/意法半导体 |
25 |
TO-263-3 |
6000 |
原装正品 |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
22+ |
NA |
4000 |
原装正品支持实单 |
询价 |