N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：34N65M5；Package：TO-220FP；N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in TO-220FP, I2PAKFP, I2PAK packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.05849 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.09 Ohm典型值、28 A MDmesh M5功率MOSFET，TO-220FP封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in TO-220FP, I2PAKFP, I2PAK packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.05849 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体