isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =29mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.024 廓 typ., 84 A, MDmesh??V Power MOSFET in TO-247 and TO-247 long leads packages

文件：1.20677 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.024 Ohm典型值、84 A MDmesh M5功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Higher VDSS rating \n• Higher dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

ST

意法半导体

Excellent switching performance thanks to the extra driving source pin

文件：711.61 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.024 Ohm典型值、84 A MDmesh M5功率MOSFET，TO247-4封装

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior • Higher VDSrating \n• Higher dv/dt capability \n• Excellent switching performance thanks to the extra driving source pin \n• Easy to drive \n• 100% avalanche tested;

ST

意法半导体