N-channel 650 V, 0.033 ohm, 69 A, MDmesh V Power MOSFET TO-247

Description This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched amo

文件：963.99 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：326.28 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.033 Ohm典型值、69 A MDmesh M5功率MOSFET，TO-247封装

This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-base • Higher VDSSrating \n• Higher dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

ST

意法半导体

公司现货

ST

上传：海芯未来半导体电子（深圳）有限公司

公司现货

ST

上传：海芯未来半导体电子（深圳）有限公司