isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V (Min) ·Static Drain-Source On-Resistance -RDS(on) =0.078Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

丝印：45N65M5；Package：TO-247；N-channel 650 V, 35 A, 0.067 廓 typ., MDmesh??V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

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STMICROELECTRONICS

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N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.68457 Mbytes 页数：20 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：436.37 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.067 Ohm典型值、35 A MDmesh M5功率MOSFET，TO-247封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on)* area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

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