isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=34A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.088Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.19475 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.17801 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.078 Ohm典型值、34 A MDmesh M2功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 78 m typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package

Features • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

文件：293.16 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体