N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh??Power MOSFET with FAST DIODE

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase shift converters. ■ TYPICAL RDS(on) = 0.22Ω ■ HIGH dv/dt AND AVAL

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Isc N-Channel MOSFET Transistor

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N-Channel 500V - 0.22Ohm - 20A - TO-247 FDmesh(TM) POWER MOSFET (with FAST DIODE)

• TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS\n• TYPICAL RDS(on) = 0.22\n• 100% AVALANCHE TESTED• HIGH dv/dt AND AVALANCHE CAPABILITIES\n• LOW GATE INPUT RESISTANCE\n• LOW INPUT CAPACITANCE AND GATE CHARGE;

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N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh?줡ower MOSFET

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

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