首页 >STW15NM60ND>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STW15NM60ND | N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d 文件:600.45 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STW15NM60ND | isc N-Channel MOSFET Transistor 文件:398.24 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
STW15NM60ND | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-247 package The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance; | ST 意法半导体 | ST | |
N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema 文件:607.96 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema 文件:607.96 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d 文件:600.45 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
详细参数
- 型号:
STW15NM60ND
- 功能描述:
MOSFET N-channel 600 V FDMesh
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
20+ |
4800 |
TO-247-3 |
询价 | |||
ST/意法 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
询价 | ||
ST(意法半导体) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法 |
2023+原装正品现货 |
TO-247 |
9800 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST |
25+23+ |
TO247 |
19281 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST(意法半导体) |
2447 |
TO-247 |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
STM |
25+ |
TO247-3 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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