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STB15NM60ND中文资料意法半导体数据手册PDF规格书
STB15NM60ND规格书详情
描述 Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
特性 Features
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
产品属性
- 型号：
STB15NM60ND
- 功能描述：
MOSFET N-channel 600V, 14A FDMesh II
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3285 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
23+ |
TO-263 |
2550 |
原厂原装正品 |
询价 | ||
ST |
17+ |
D2PAK |
6200 |
询价 | |||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST |
24+ |
TO-263 |
7500 |
询价 | |||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
24+ |
TO263 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
STM |
23+ |
TO263 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST/意法 |
2022+ |
D2PAK |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
ADI |
23+ |
TO263-2 |
8000 |
只做原装现货 |
询价 |
