丝印：19NM60N；Package：TO-24；Automotive-grade N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in a TO-247 package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore s

文件：1.02699 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：420.01 Kbytes 页数：2 Pages

ISC

无锡固电

汽车级N沟道600 V、0.26 Ohm、13 A MDmesh(TM) II功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • Designed for automotive applications and AEC-Q101 qualified \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

Automotive-grade N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in a TO-247 package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore s

文件：1.02699 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体