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STW19NM60N数据手册ST中文资料规格书
STW19NM60N规格书详情
描述 Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
特性 Features
• Designed for automotive applications and AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
技术参数
- 制造商编号
:STW19NM60N
- 生产厂家
:ST
- Package
:TO-247
- Grade
:Automotive
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.285
- Drain Current (Dc)_max(A)
:13
- PTOT_max(W)
:110
- Qg_typ(nC)
:35
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法半导体 |
23+ |
TO-247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
ST/意法 |
24+ |
TO-247-3 |
600 |
只做原装,欢迎询价,量大价优 |
询价 | ||
ST/意法 |
21+ |
NA |
8970 |
只做原装,假一罚十 |
询价 | ||
ST/意法半导体 |
22+ |
TO-247-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
16900 |
原装,正品 |
询价 | ||
ST/意法 |
23+ |
NA |
25630 |
原装正品 |
询价 | ||
ST/意法 |
21+ |
NA |
8970 |
百域芯优势 实单必成 可开13点增值税 |
询价 |