丝印：20NF20；Package：PowerFLAT；N-channel 200 V, 0.10 Ω, 15 A PowerFLAT™ (5x6) low gate charge STripFET™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Low gate charge ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate c

文件：777.77 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.125Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.68 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

文件：915.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

文件：505.84 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体