N-channel 600 V, 220 m typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

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STMICROELECTRONICS

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N-channel 600 V, 220 mOhm typ., 13 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

Package：8-PowerVDFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 650V 15A PWRFLAT HV

STMICROELECTRONICS

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N-channel 600 V, 200 m typ., 15 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：266.65 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体